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Toshiba Electronic Components Datasheet

TTC011 Datasheet

NPN Transistor

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Bipolar Transistors Silicon NPN Triple-Diffused Type
TTC011
1. Applications
• High-Voltage Switching
• LCD Backlighting
2. Features
(1) High collector breakdown voltage: VCEO = 230 V
(2) High DC current gain: hFE = 100 to 320 (IC = 0.2 A)
3. Packaging and Internal Circuit
TTC011
1. Emitter
2. Collector
3. Base
TO-126
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
230
V
Collector-emitter voltage
VCEO
230
Emitter-base voltage
VEBO
5
Collector current (DC)
(Note 1)
IC
1
A
Collector current (pulsed)
(Note 1)
ICP
2
Base current
IB
0.1
Collector power dissipation
PC
1.5
W
Collector power dissipation
(Tc = 25 )
PC
10
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to 150
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Ensure that the junction temperature does not exceed 150 .
1
2013-01-30
Rev.1.0


Toshiba Electronic Components Datasheet

TTC011 Datasheet

NPN Transistor

No Preview Available !

TTC011
5. Electrical Characteristics
5.1. Static Characteristics (Ta = 25 unless otherwise specified)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Collector output capacitance
Symbol
Test Condition
ICBO
IEBO
V(BR)CEO
hFE(1)
hFE(2)
VCE(sat)
VBE
Cob
VCB = 230 V, IE = 0 A
VEB = 5 V, IC = 0 A
IC = 10 mA, IB = 0 A
VCE = 5 V, IC = 0.2 A
VCE = 5 V, IC = 0.8 A
IC = 0.3 A, IB = 30 mA
VCE = 5 V, IC = 0.3 A
ICB = 10 V, IE = 0 A, f = 1 MHz
Min Typ. Max Unit
1.0
µA
1.0
230
V
100
320
20
1.0
V
1.0
20
pF
5.2. Dynamic Characteristics (Ta = 25 unless otherwise specified)
Characteristics
Switching time (rise time)
Switching time (storage time)
Switching time (fall time)
Symbol
Test Condition
tr
See Figure 5.2.1.
tstg
VCC 100 V, RL = 333 ,
IB1 = 30 mA, IB2 = 60 mA,
tf
Duty cycle 1%
Min Typ. Max Unit
0.05
µs
2.7
0.38
6. Marking (Note)
Fig. 5.2.1 Switching Time Test Circuit
Fig. 6.1 Marking
Note:
A line under a Lot No. identifies the indication of product Labels.
[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
compatibility of Product.
The RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the
restriction of the use of certain hazardous substances in electrical and electronic equipment.
2
2013-01-30
Rev.1.0


Part Number TTC011
Description NPN Transistor
Maker Toshiba
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TTC011 Datasheet PDF






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