TTC015B - NPN Transistor

Product Overview

Toshiba

Part number	TTC015B
Manufacturer	Toshiba
File Size	223.85 KB
Description	NPN Transistor
Datasheet	TTC015B Datasheet
Additional preview pages of the TTC015B datasheet.

(1) High DC current gain : hFE = 100 to 200 (IC = 0.5 A) (2) Low collector emitter saturation voltage : VCE(sat) = 0.5 V (max) (IC = 1A) (3) High-speed switching : tstg = 400 ns (typ. ) (IC = 1A) (4) Complementary to TTA008B 3. Packaging and Internal Circuit (Note) TTC015B 1. Emitter 2. Collector 3. Base TO-126N Note: Although this device is encapsulated in epoxy resin, it does not provide any guarantee to the maximum isolation voltage. Therefore, as with the case with non-isolated devic.

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Published: Jan 20, 2021 |