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TTC012 - NPN Transistor

Key Features

  • (1) High speed switching : tf = 0.15 µs (typ. ) (IC = 0.5 A) (2) High collector breakdown voltage: VCES = 800 V , VCEO = 375 V 3. Packaging and Internal Circuit TTC012 1. Base 2. Collector 3. Emitter New PW-Mold2 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Collector-emitter voltage VCBO 800 V VCES 800 VCEO 375 Emitter-base voltage Collector current (DC) Collector curr.

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Datasheet Details

Part number TTC012
Manufacturer Toshiba
File Size 188.73 KB
Description NPN Transistor
Datasheet download datasheet TTC012 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Bipolar Transistors Silicon NPN Triple-Diffused Type TTC012 1. Applications • High-Speed High-Voltage Switching • Switching Voltage Regulators • High-Speed DC-DC Converters 2. Features (1) High speed switching : tf = 0.15 µs (typ.) (IC = 0.5 A) (2) High collector breakdown voltage: VCES = 800 V , VCEO = 375 V 3. Packaging and Internal Circuit TTC012 1. Base 2. Collector 3. Emitter New PW-Mold2 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Collector-emitter voltage VCBO 800 V VCES 800 VCEO 375 Emitter-base voltage Collector current (DC) Collector current (pulsed) Base current Collector power dissipation (Ta = 25) (Note 1) (Note 1) VEBO IC ICP IB PC 8 2.