TTC014 - NPN Transistor

Toshiba

Key Features

(1) High DC current gain : hFE = 100 to 200 (IC = 0.1 A) (2) High collector breakdown voltage : VCEO = 800 V, VCBO = 900 V (3) High-speed switching : tr = 0.2 µs (typ. ), tf = 0.4 µs (typ. ) (IC = 0.3 A) 3. Packaging and Internal Circuit TTC014 1. Base 2. Collector (Heatsink) 3. Emitter New PW-Mold 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Rating Unit Collector-base voltage VCBO 900 V Collector-emitter voltage VCES 900 C.

TTC014 npn transistor by Toshiba - Datasheet Preview

Datasheet Details

Part number	TTC014
Manufacturer	Toshiba
File Size	175.90 KB
Description	NPN Transistor
Datasheet	TTC014 Datasheet

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Bipolar Transistors Silicon NPN Triple-Diffused Type TTC014 1. Applications • High-Speed High-Voltage Switching • Switching Voltage Regulators • High-Speed DC-DC Converters 2. Features (1) High DC current gain : hFE = 100 to 200 (IC = 0.1 A) (2) High collector breakdown voltage : VCEO = 800 V, VCBO = 900 V (3) High-speed switching : tr = 0.2 µs (typ.), tf = 0.4 µs (typ.) (IC = 0.3 A) 3. Packaging and Internal Circuit TTC014 1. Base 2. Collector (Heatsink) 3. Emitter New PW-Mold 4.