TTC014 - NPN Transistor

Product Overview

Toshiba

Part number	TTC014
Manufacturer	Toshiba
File Size	175.90 KB
Description	NPN Transistor
Datasheet	TTC014 Datasheet
Additional preview pages of the TTC014 datasheet.

(1) High DC current gain : hFE = 100 to 200 (IC = 0.1 A) (2) High collector breakdown voltage : VCEO = 800 V, VCBO = 900 V (3) High-speed switching : tr = 0.2 µs (typ. ), tf = 0.4 µs (typ. ) (IC = 0.3 A) 3. Packaging and Internal Circuit TTC014 1. Base 2. Collector (Heatsink) 3. Emitter New PW-Mold 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Rating Unit Collector-base voltage VCBO 900 V Collector-emitter voltage VCES 900 C.

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Published: Jun 2, 2015 |