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Bipolar Transistors Silicon NPN Triple-Diffused Type
TTC013
1. Applications
• High-Voltage Switching • LCD Backlighting
2. Features
(1) High collector breakdown voltage: VCEO = 350 V (2) High DC current gain: hFE = 100 to 200 (IC = 50 mA)
3. Packaging and Internal Circuit
TTC013
1. Base 2. Collector (Heatsink) 3. Emitter
PW-Mini
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
.
VCBO
600
V
Collector-emitter voltage Emitter-base voltage
VCEO
350
VEBO
7
Collector current (DC)
(Note 1)
IC
0.5
A
Collector current (pulsed) Base current
(Note 1)
ICP
IB
1 0.25
Collector power dissipation
DC
(Note 2)
PC
1
W
Collector power dissipation
(t = 10 s)
(Note 2)
2.
TTC013 Datasheet
