TTC013 Datasheet NPN Transistor

Manufacturer: Toshiba

Overview: Bipolar Transistors Silicon NPN Triple-Diffused Type TTC013 1. Applications • High-Voltage Switching • LCD Backlighting 2.

Datasheet Details

(1) High collector breakdown voltage: VCEO = 350 V (2) High DC current gain: hFE = 100 to 200 (IC = 50 mA) 3. Packaging and Internal Circuit TTC013 1. Base 2. Collector (Heatsink) 3. Emitter PW-Mini 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25) Characteristics Symbol Rating Unit Collector-base voltage . VCBO 600 V Collector-emitter voltage Emitter-base voltage VCEO 350 VEBO 7 Collector current (DC) (Note 1) IC 0.5 A Collector current (pulsed) B.