TTC011 - NPN Transistor

Toshiba

Key Features

(1) High collector breakdown voltage: VCEO = 230 V (2) High DC current gain: hFE = 100 to 320 (IC = 0.2 A) 3. Packaging and Internal Circuit TTC011 1. Emitter 2. Collector 3. Base TO-126 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symbol Rating Unit Collector-base voltage VCBO 230 V Collector-emitter voltage VCEO 230 Emitter-base voltage VEBO 5 Collector current (DC) (Note 1) IC 1 A Collector current (pulsed) (Note 1) ICP 2.

TTC011 npn transistor by Toshiba - Datasheet Preview

Datasheet Details

Part number	TTC011
Manufacturer	Toshiba
File Size	184.87 KB
Description	NPN Transistor
Datasheet	TTC011 Datasheet

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Bipolar Transistors Silicon NPN Triple-Diffused Type TTC011 1. Applications • High-Voltage Switching • LCD Backlighting 2. Features (1) High collector breakdown voltage: VCEO = 230 V (2) High DC current gain: hFE = 100 to 320 (IC = 0.2 A) 3. Packaging and Internal Circuit TTC011 1. Emitter 2. Collector 3. Base TO-126 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symbol Rating Unit Collector-base voltage VCBO 230 V Collector-emitter voltage VCEO 230 Emitter-base voltage VEBO 5 Collector current (DC) (Note 1) IC 1 A Collector current (pulsed) (Note 1) ICP 2 Base current IB 0.1 Collector power dissipation PC 1.