TTC011 - NPN Transistor

Product Overview

Toshiba

Part number	TTC011
Manufacturer	Toshiba
File Size	184.87 KB
Description	NPN Transistor
Datasheet	TTC011 Datasheet
Additional preview pages of the TTC011 datasheet.

(1) High collector breakdown voltage: VCEO = 230 V (2) High DC current gain: hFE = 100 to 320 (IC = 0.2 A) 3. Packaging and Internal Circuit TTC011 1. Emitter 2. Collector 3. Base TO-126 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symbol Rating Unit Collector-base voltage VCBO 230 V Collector-emitter voltage VCEO 230 Emitter-base voltage VEBO 5 Collector current (DC) (Note 1) IC 1 A Collector current (pulsed) (Note 1) ICP 2.

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Published: Jan 20, 2021 |