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TTC012 - NPN Transistor

Features

  • (1) High speed switching : tf = 0.15 µs (typ. ) (IC = 0.5 A) (2) High collector breakdown voltage: VCES = 800 V , VCEO = 375 V 3. Packaging and Internal Circuit TTC012 1. Base 2. Collector 3. Emitter New PW-Mold2 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Collector-emitter voltage VCBO 800 V VCES 800 VCEO 375 Emitter-base voltage Collector current (DC) Collector curr.

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Bipolar Transistors Silicon NPN Triple-Diffused Type TTC012 1. Applications • High-Speed High-Voltage Switching • Switching Voltage Regulators • High-Speed DC-DC Converters 2. Features (1) High speed switching : tf = 0.15 µs (typ.) (IC = 0.5 A) (2) High collector breakdown voltage: VCES = 800 V , VCEO = 375 V 3. Packaging and Internal Circuit TTC012 1. Base 2. Collector 3. Emitter New PW-Mold2 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Collector-emitter voltage VCBO 800 V VCES 800 VCEO 375 Emitter-base voltage Collector current (DC) Collector current (pulsed) Base current Collector power dissipation (Ta = 25) (Note 1) (Note 1) VEBO IC ICP IB PC 8 2.
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