TTC017 - NPN Transistor

Toshiba

Key Features

(1) High DC current gain : hFE = 180 to 450 (IC = 0.5 A) (2) Low collector saturation voltage : VCE(sat) = 0.5 V (max) (IC = 1 A) (3) High-speed switching : tstg = 400 ns (typ. ) (IC = 1 A) 3. Packaging and Internal Circuit TTC017 New PW-Mold 1. Base 2. Collector (Heatsink) 3. Emitter Start of commercial production 2015-03 1 2015-03-24 Rev.1.0 TTC017 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Rating Unit Collector-base vol.

TTC017 npn transistor by Toshiba - Datasheet Preview

Datasheet Details

Part number	TTC017
Manufacturer	Toshiba
File Size	492.16 KB
Description	NPN Transistor
Datasheet	TTC017 Datasheet

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Bipolar Transistors Silicon NPN Epitaxial Type TTC017 1. Applications • Power Amplifiers • Power Switching 2. Features (1) High DC current gain : hFE = 180 to 450 (IC = 0.5 A) (2) Low collector saturation voltage : VCE(sat) = 0.5 V (max) (IC = 1 A) (3) High-speed switching : tstg = 400 ns (typ.) (IC = 1 A) 3. Packaging and Internal Circuit TTC017 New PW-Mold 1. Base 2. Collector (Heatsink) 3. Emitter Start of commercial production 2015-03 1 2015-03-24 Rev.1.0 TTC017 4.