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Bipolar Transistors Silicon NPN Epitaxial Type
TTC015B
1. Applications
• Power Amplifiers • Power Switching
2. Features
(1) High DC current gain
: hFE = 100 to 200 (IC = 0.5 A)
(2) Low collector emitter saturation voltage : VCE(sat) = 0.5 V (max) (IC = 1A)
(3) High-speed switching
: tstg = 400 ns (typ.) (IC = 1A)
(4) Complementary to TTA008B
3. Packaging and Internal Circuit (Note)
TTC015B
1. Emitter 2. Collector 3. Base
TO-126N
Note: Although this device is encapsulated in epoxy resin, it does not provide any guarantee to the maximum isolation voltage. Therefore, as with the case with non-isolated devices, care should be taken with regard to electrical isolation from surrounding parts.
Start of commercial production
2013-08
1
2015-01-22
Rev.1.0
TTC015B
4.
TTC015B Datasheet
