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Toshiba Electronic Components Datasheet

TTC017 Datasheet

NPN Transistor

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Bipolar Transistors Silicon NPN Epitaxial Type
TTC017
1. Applications
• Power Amplifiers
• Power Switching
2. Features
(1) High DC current gain
: hFE = 180 to 450 (IC = 0.5 A)
(2) Low collector saturation voltage : VCE(sat) = 0.5 V (max) (IC = 1 A)
(3) High-speed switching
: tstg = 400 ns (typ.) (IC = 1 A)
3. Packaging and Internal Circuit
TTC017
New PW-Mold
1. Base
2. Collector (Heatsink)
3. Emitter
Start of commercial production
2015-03
1
2015-03-24
Rev.1.0


Toshiba Electronic Components Datasheet

TTC017 Datasheet

NPN Transistor

No Preview Available !

TTC017
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
160
V
Collector-emitter voltage
VCEX
160
VCEO
80
Emitter-base voltage
VEBO
9
Collector current (DC)
(Note 1)
IC
3
A
Collector current (pulsed)
(Note 1)
ICP
5
Base current
IB
1.5
Collector power dissipation
PC
1.2
W
Collector power dissipation
(Tc = 25 )
PC
12
Junction temperature
(Note 2)
Tj
175
Storage temperature
Tstg
-55 to 150
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Ensure that the junction temperature does not exceed 175 .
Note 2: Merely junction temperature is guaranteed 175 .
Storage temperature range is guaranteed as usual (-55 to 150 ).
5. Electrical Characteristics
5.1. Static Characteristics (Unless otherwise specified, Ta = 25 )
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Symbol
Test Condition
ICBO
IEBO
V(BR)CEO
hFE(1)
hFE(2)
hFE(3)
VCE(sat)(1)
VCE(sat)(2)
VBE(sat)
VCB = 160 V, IE = 0 A
VEB = 9 V, IC = 0 A
IC = 10 mA, IB = 0 A
VCE = 2 V, IC = 1 mA
VCE = 2 V, IC = 0.5 A
VCE = 2 V, IC = 1 A
IC = 0.5 A, IB = 50 mA
IC = 1 A, IB = 100 mA
IC = 1 A, IB = 100 mA
Min Typ. Max Unit
100
nA
100
80
V
150
180
450
100
0.3
V
0.5
1.5
2
2015-03-24
Rev.1.0


Part Number TTC017
Description NPN Transistor
Maker Toshiba
PDF Download

TTC017 Datasheet PDF






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