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TC59YM916BKG40B Datasheet, Toshiba America Electronic

TC59YM916BKG40B Datasheet, Toshiba America Electronic

TC59YM916BKG40B

datasheet Download (Size : 1.37MB)

TC59YM916BKG40B Datasheet

TC59YM916BKG40B device

512-megabit xdrtm dram the rambus xdrtm dram device.

TC59YM916BKG40B

datasheet Download (Size : 1.37MB)

TC59YM916BKG40B Datasheet

TC59YM916BKG40B Features and benefits

TC59YM916BKG40B Features and benefits


* Highest pin bandwidth available − 4000/3200/2400 Mb/s Octal Data Rate (ODR) Signaling − Bi-directional differential RSL (DRSL) Flexible read/write bandwidth allocat.

TC59YM916BKG40B Application

TC59YM916BKG40B Application

including computer memory, graphics, video, and any other application where high bandwidth and low latency are required..

TC59YM916BKG40B Description

TC59YM916BKG40B Description

www.DataSheet4U.com The timing diagrams in Figure 1 illustrate XDR DRAM device write and read transactions. There are three sets of pins used for normal memory access transactions: CFM/CFMN clock pins, RQ11…RQ0 request pins, and DQ15…DQ0/DQN15...DQN.

Image gallery

TC59YM916BKG40B Page 1 TC59YM916BKG40B Page 2 TC59YM916BKG40B Page 3

TAGS

TC59YM916BKG40B
512-megabit
XDRTM
DRAM
The
Rambus
XDRTM
DRAM
device
Toshiba America Electronic

Manufacturer


Toshiba (https://www.toshiba.com/) America Electronic

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