Datasheet4U Logo Datasheet4U.com

TC59YM916BKG40B - 512-megabit XDRTM DRAM The Rambus XDRTM DRAM device

Download the TC59YM916BKG40B datasheet PDF. This datasheet also covers the TC59YM916BKG24A variant, as both devices belong to the same 512-megabit xdrtm dram the rambus xdrtm dram device family and are provided as variant models within a single manufacturer datasheet.

General Description

The timing diagrams in Figure 1 illustrate XDR DRAM device write and read transactions.

There are three sets of pins used for normal memory access transactions: CFM/CFMN clock pins, RQ11…RQ0 request pins, and DQ15…DQ0/DQN15DQN0 data pins.

Key Features

  • Highest pin bandwidth available.
  • 4000/3200/2400 Mb/s Octal Data Rate (ODR) Signaling.
  • Bi-directional differential RSL (DRSL) Flexible read/write bandwidth allocation Minimum pin count.
  • Programmable on-chip termination Adaptive impedance matching Reduced system cost and routing complexity.
  • Highest sustained bandwidth per DRAM device.
  • 8000/6400/4800 MB/s sustained data rate 8 banks: bank-interl.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (TC59YM916BKG24A_ToshibaAmericaElectronic.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number TC59YM916BKG40B
Manufacturer Toshiba America Electronic
File Size 1.37 MB
Description 512-megabit XDRTM DRAM The Rambus XDRTM DRAM device
Datasheet download datasheet TC59YM916BKG40B Datasheet

Full PDF Text Transcription for TC59YM916BKG40B (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for TC59YM916BKG40B. For precise diagrams, and layout, please refer to the original PDF.

TC59YM916BKG24A,32A,32B,40B,32C,40C TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC OVERVIEW Lead Free www.DataSheet4U.com The Rambus XDRTM DRAM devic...

View more extracted text
HIC OVERVIEW Lead Free www.DataSheet4U.com The Rambus XDRTM DRAM device is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high bandwidth and low latency are required. The 512Mb Rambus XDR DRAM device is a CMOS DRAM organized as 32M words by 16 bits. The use of Differential Rambus Signaling Level (DRSL) technology permits 4000/3200/2400 Mb/s transfer rates while using conventional system and board design technologies. XDR DRAM devices are capable of sustained data transfers of 8000/6400/4800 MB/s.

More Datasheets from Toshiba America Electronic

Part Number Description
TC59YM916BKG40C 512-megabit XDRTM DRAM The Rambus XDRTM DRAM device
TC59YM916BKG24A 512-megabit XDRTM DRAM The Rambus XDRTM DRAM device
TC59YM916BKG32A 512-megabit XDRTM DRAM The Rambus XDRTM DRAM device
TC59YM916BKG32B 512-megabit XDRTM DRAM The Rambus XDRTM DRAM device
TC59YM916BKG32C 512-megabit XDRTM DRAM The Rambus XDRTM DRAM device