TC59YM916BKG24A_ToshibaAmericaElectronic.pdf
Datasheet Details
Part number:
TC59YM916BKG32C, TC59YM916BKG24A
Manufacturer:
Toshiba ↗ America Electronic
File Size:
1.37 MB
Description:
512-megabit xdrtm dram the rambus xdrtm dram device.
Note:
This datasheet PDF includes multiple part numbers: TC59YM916BKG32C, TC59YM916BKG24A.
Please refer to the document for exact specifications by model.
TC59YM916BKG32C, TC59YM916BKG24A, 512-megabit XDRTM DRAM The Rambus XDRTM DRAM device
TC59YM916BKG24A,32A,32B,40B,32C,40C TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC OVERVIEW Lead Free www.DataSheet4U.com The Rambus XDRTM DRAM device is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high bandwidth and low latency are required.
The 512Mb Rambus XDR DRAM device is a CMOS DRAM organized as 32M words by 16 bits.
The use of Differe
TC59YM916BKG32C Features
* Highest pin bandwidth available
* 4000/3200/2400 Mb/s Octal Data Rate (ODR) Signaling
* Bi-directional differential RSL (DRSL) Flexible read/write bandwidth allocation Minimum pin count
* Programmable on-chip termination Adaptive impedance matching Reduced system co
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