TC59YM916BKG32B, TC59YM916BKG24A 512-megabit XDRTM DRAM The Rambus XDRTM DRAM device

Toshiba America Electronic

Description

TC59YM916BKG24A,32A,32B,40B,32C,40C TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC OVERVIEW Lead Free www.DataSheet4U.com The.
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TC59YM916BKG32B Datasheet Preview — This datasheet PDF includes multiple part numbers: TC59YM916BKG32B, TC59YM916BKG24A. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: TC59YM916BKG32B, TC59YM916BKG24A
Manufacturer: Toshiba ↗ America Electronic
File Size: 1.37 MB
Datasheet: TC59YM916BKG24A_ToshibaAmericaElectronic.pdf
Description: 512-megabit XDRTM DRAM The Rambus XDRTM DRAM device
Note: This datasheet PDF includes multiple part numbers: TC59YM916BKG32B, TC59YM916BKG24A.
Please refer to the document for exact specifications by model.

Features

* Highest pin bandwidth available
* 4000/3200/2400 Mb/s Octal Data Rate (ODR) Signaling
* Bi-directional differential RSL (DRSL) Flexible read/write bandwidth allocation Minimum pin count
* Programmable on-chip termination Adaptive impedance matching Reduced system co

Applications

* including computer memory, graphics, video, and any other application where high bandwidth and low latency are required. The 512Mb Rambus XDR DRAM device is a CMOS DRAM organized as 32M words by 16 bits. The use of Differential Rambus Signaling Level (DRSL) technology permits 4000/3200/2400 Mb/s tra

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TC59YM916BKG24A 512-megabit XDRTM DRAM The Rambus XDRTM DRAM device Toshiba America Electronic

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