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TC59YM916BKG40B

512-megabit XDRTM DRAM The Rambus XDRTM DRAM device

TC59YM916BKG40B Features

* Highest pin bandwidth available

* 4000/3200/2400 Mb/s Octal Data Rate (ODR) Signaling

* Bi-directional differential RSL (DRSL) Flexible read/write bandwidth allocation Minimum pin count

* Programmable on-chip termination Adaptive impedance matching Reduced system co

TC59YM916BKG40B General Description

www.DataSheet4U.com The timing diagrams in Figure 1 illustrate XDR DRAM device write and read transactions. There are three sets of pins used for normal memory access transactions: CFM/CFMN clock pins, RQ11…RQ0 request pins, and DQ15…DQ0/DQN15DQN0 data pins. The “N” appended to a signal name denote.

TC59YM916BKG40B Datasheet (1.37 MB)

Preview of TC59YM916BKG40B PDF

Datasheet Details

Part number:

TC59YM916BKG40B

Manufacturer:

Toshiba ↗ America Electronic

File Size:

1.37 MB

Description:

512-megabit xdrtm dram the rambus xdrtm dram device.
TC59YM916BKG24A,32A,32B,40B,32C,40C TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC OVERVIEW Lead Free www.DataSheet4U.com The.

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TAGS

TC59YM916BKG40B 512-megabit XDRTM DRAM The Rambus XDRTM DRAM device Toshiba America Electronic

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