TC59YM916BKG24A Datasheet (Toshiba America Electronic) - 512-megabit XDRTM DRAM The Rambus XDRTM DRAM device

TC59YM916BKG24A, 512-megabit XDRTM DRAM The Rambus XDRTM DRAM device

TC59YM916BKG24A,32A,32B,40B,32C,40C TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC OVERVIEW Lead Free www.DataSheet4U.com The Rambus XDRTM DRAM device is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high bandwidth and low latency are required.

The 512Mb Rambus XDR DRAM device is a CMOS DRAM organized as 32M words by 16 bits.

The use of Differe

TC59YM916BKG24A Features

* Highest pin bandwidth available

* 4000/3200/2400 Mb/s Octal Data Rate (ODR) Signaling

* Bi-directional differential RSL (DRSL) Flexible read/write bandwidth allocation Minimum pin count

* Programmable on-chip termination Adaptive impedance matching Reduced system co