Toshiba Electronic Components Datasheet

2SA1735 Datasheet

Silicon PNP Epitaxial Type Transistor

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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)

2SA1735

Power Amplifier Applications

Power Switching Applications

2SA1735

Unit: mm

• Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −500 mA)

• High speed switching time: tstg = 0.25 μs (typ.)

• Small flat package

• PC = 1.0 to 2.0 W (mounted on a ceramic substrate)

• Complementary to 2SC4540

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Base current

Collector power dissipation

Junction temperature

Storage temperature range

VCBO

VCEO

VEBO

(Note 1)

Tstg

−60

−50

−6

−1

−0.2

500

1000

150

−55 to 150

°C

PW-MINI

JEDEC

―

JEITA

SC-62

TOSHIBA

2-5K1A

Weight: 0.05 g (typ.)

Note 1: Mounted on a ceramic substrate (250 mm2 × 0.8 t)

Note 2:

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute

maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

1 2009-12-21

Toshiba Electronic Components Datasheet

2SA1735 Datasheet

Silicon PNP Epitaxial Type Transistor

No Preview Available !

Electrical Characteristics (Ta = 25°C)

Characteristics

Collector cut-off current

Emitter cut-off current

Collector-emitter breakdown voltage

DC current gain

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

Collector output capacitance

Symbol

Test Condition

ICBO

IEBO

V (BR) CEO

hFE (1)

hFE (2)

VCE (sat)

VBE (sat)

Cob

VCB = −60 V, IE = 0

VEB = −6 V, IC = 0

IC = −10 mA, IB = 0

VCE = −2 V, IC = −100 mA

VCE = −2 V, IC = −700 mA

IC = −500 mA, IB = −25 mA

VCE = −2 V, IC = −100 mA

VCB = −10 V, IE = 0, f = 1 MHz

Turn-on time

Switching time

Storage time

Fall time

ton

IB2

OUTPUT

IB2

tstg IB1 INPUT IB1

20 μs

VCC = −25 V

IB1 = 25 mA,IB2 = 25 mA

DUTY CYCLE ≤ 1%

2SA1735

Min Typ. Max Unit

― ― −0.1 μA

−50 ―

―

120 ― 400

40 ― ―

― ― −0.5 V

― ― −1.2 V

― 100 ― MHz

― 16 ― pF

― 0.1 ―

― 0.25 ―

μs

― 0.1 ―

Marking

Lot No.

Part No. (or abbreviation code)

Note 3

Note 3: A line beside a Lot No. identifies the indication of product Labels.

Without a line: [[Pb]]/INCLUDES > MCV

With a line: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]

Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS

compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27

January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment.

2 2009-12-21

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2SA1735 Datasheet

Silicon PNP Epitaxial Type Transistor

2SA1735 Datasheet

Silicon PNP Epitaxial Type Transistor

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