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Toshiba Electronic Components Datasheet

2SA1736 Datasheet

PNP Transistor

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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1736
Power Amplifier Applications
Power Switching Applications
2SA1736
Unit: mm
Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1.5 A)
High speed switching time: tstg = 0.2 μs (typ.)
Small flat package
PC = 1.0 to 2.0 W (mounted on a ceramic substrate)
Complementary to 2SC4541
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
VCBO
60
V
VCEO
50
V
VEBO
6
V
IC
3
A
IB
0.6
A
PC
500
PC
mW
1000
(Note 1)
Tj
150
°C
Tstg
55 to 150
°C
PW-MINI
JEDEC
JEITA
SC-62
TOSHIBA
2-5K1A
Weight: 0.05 g (typ.)
Note 1: Mounted on a ceramic substrate (250 mm2 × 0.8 t)
Note 2:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2009-12-21


Toshiba Electronic Components Datasheet

2SA1736 Datasheet

PNP Transistor

No Preview Available !

Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
Test Condition
ICBO
IEBO
V (BR) CEO
hFE (1)
hFE (2)
VCE (sat)
VBE (sat)
fT
Cob
VCB = 60 V, IE = 0
VEB = 6 V, IC = 0
IC = 10 mA, IB = 0
VCE = 2 V, IC = 100 mA
VCE = 2 V, IC = 2 A
IC = 1.5 A, IB = 75 mA
IC = 1.5 A, IB = 75 mA
VCE = 2 V, IC = 100 mA
VCB = 10 V, IE = 0, f = 1 MHz
Turn-on time
Switching time
Storage time
Fall time
ton
IB2
OUTPUT
IB2
tstg
IB1
INPUT IB1
20 μs
VCC = 30 V
tf
IB1 = 75 mA,IB2 = 75 mA,
DUTY CYCLE 1%
2SA1736
Min Typ. Max Unit
― −0.1 μA
― −0.1 μA
50
V
120
400
40
0.5
V
1.2
V
100 MHz
32
pF
0.1
0.2
μs
0.1
Marking
LD
Lot No.
Part No. (or abbreviation code)
Note 3
Note 3: A line beside a Lot No. identifies the indication of product Labels.
Without a line: [[Pb]]/INCLUDES > MCV
With a line: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27
January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment.
2
2009-12-21


Part Number 2SA1736
Description PNP Transistor
Maker Toshiba Semiconductor
PDF Download

2SA1736 Datasheet PDF






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