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Toshiba Electronic Components Datasheet

2SA965 Datasheet

Silicon PNP Transistor

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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA965
Power Amplifier Applications
Driver-Stage Amplifier Applications
2SA965
Unit: mm
Complementary to 2SC2235.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
120
V
Collector-emitter voltage
VCEO
120
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
800
mA
Base current
IB
-80
mA
Collector power dissipation
PC
900
mW
Junction temperature
Storage temperature range
Tj
150
°C
Tstg
55 to 150
°C
JEDEC
TO-92MOD
Note1: Using continuously under heavy loads (e.g. the application of high
JEITA
temperature/current/voltage and the significant change in
TOSHIBA
2-5J1A
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
Weight: 0.36 g (typ.)
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1
2009-12-21


Toshiba Electronic Components Datasheet

2SA965 Datasheet

Silicon PNP Transistor

No Preview Available !

Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
ICBO
VCB = 120 V, IE = 0
IEBO
VEB = 5 V, IC = 0
V (BR) CEO IC = 10 mA, IB = 0
V (BR) EBO IE = 1 mA, IC = 0
hFE
(Note 2)
VCE = 5 V, IC = 100 mA
VCE (sat) IC = 500 mA, IB = 50 mA
VBE
VCE = 5 V, IC = 500 mA
fT
VCE = 5 V, IC = 100 mA
Cob
VCB = 10 V, IE = 0, f = 1 MHz
Note 2: hFE classification O: 80 to 160, Y: 120 to 240
Marking
2SA965
Min Typ. Max Unit
― −100 nA
― −100 nA
120
V
5
V
80
240
1.0
V
1.0
V
120 MHz
40
pF
A965
Characteristics
indicator
Part No. (or abbreviation code)
Lot No.
Note 3
Note 3: A line under a Lot No. identifies the indication of product Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27
January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment.
2
2009-12-21


Part Number 2SA965
Description Silicon PNP Transistor
Maker Toshiba Semiconductor
PDF Download

2SA965 Datasheet PDF






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