2SJ104 Datasheet | Toshiba

TOSHIBA Field Effect Transistor Silicon P Channel Junction Type For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications Unit: mm - High input impedance: IGSS = 1.0 n A (max) (VGS = 25 V) - Low RDS (ON) = 40 Ω (typ.) (IDSS = - 5 m A) - plimentary to 2SK364 Maximum Ratings (Ta = 25°C) Characteristics Gate-drain voltage Gate current Drain power dissipation Junction temperature Storage temperature range Symbol VGDS IG PD Tj Tstg Rating 25 -10 400 125 -55~125 Unit V m A m W °C °C Electrical Characteristics (Ta = 25°C) JEDEC TO-92 JEITA SC-43 TOSHIBA 2-5F1D Weight: 0.21 g (typ.) Characteristics Symbol Test Condition Min Typ. Max Unit Gate cut-off current Gate-drain breakdown voltage Drain current Gate-source cut-off voltage Forward transfer admittance Input capacitance Reverse transfer capacitance Drain-source ON resistance IGSS V (BR) GDS VGS = 25 V, VDS = 0 VDS = 0, IG = 100 m A ¾ ¾ 1.0 n A 25 ¾ ¾ IDSS VDS = -10 V, VGS = 0 (Note...