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Toshiba Electronic Components Datasheet

2SJ106 Datasheet

Silicon P Channel Junction Type Field Effect Transistor

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2SJ106
TOSHIBA Field Effect Transistor Silicon P Channel Junction Type
2SJ106
Audio Frequency Amplifier Applications
Analog Switch Applications
Constant Current Applications
Impedance Converter Applications
Unit: mm
High breakdown voltage: VGDS = 50 V
High input impedance: IGSS = 1.0 nA (max) (VGS = 30 V)
Low RDS (ON): RDS (ON) = 270 (typ.) (IDSS = 5 mA)
Small package
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Gate-drain voltage
Gate current
Drain power dissipation
Junction temperature
Storage temperature range
Symbol
VGDS
IG
PD
Tj
Tstg
Rating
50
10
150
125
55~125
Unit
V
mA
mW
°C
°C
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
JEDEC
TO-236MOD
JEITA
SC-59
TOSHIBA
2-3F1B
Weight: 0.012 g (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate cut-off current
Gate-drain breakdown voltage
Drain current
Gate-source cut-off voltage
Forward transfer admittance
Drain-source on resistance
Input capacitance
Reverse transfer capacitance
Symbol
Test Condition
IGSS
VGS = 30 V, VDS = 0
V (BR) GDS VDS = 0, IG = 100 μA
IDSS
(Note)
VDS = −10 V, VGS = 0
VGS (OFF)
Yfs
RDS (ON)
Ciss
Crss
VDS = −10 V, ID = −0.1 μA
VDS = −10 V, VGS = 0, f = 1 kHz
VDS = −10 mV, VGS = 0
IDSS = −5 mA
VDS = −10 V, VGS = 0, f = 1 MHz
VDG = −10 V, ID = 0, f = 1 MHz
Min Typ. Max Unit
⎯ ⎯ 1.0 nA
50 ⎯ ⎯
V
1.2 ⎯ −14 mA
0.3 6.0 V
1.0 4.0 mS
270
Ω
18 pF
3.6 pF
Note: IDSS classification Y: 1.2~3.0 mA, GR (G): 2.6~6.5 mA, BL (L): 6~14 mA
Marking
1 2007-11-01


Toshiba Electronic Components Datasheet

2SJ106 Datasheet

Silicon P Channel Junction Type Field Effect Transistor

No Preview Available !

2SJ106
2 2007-11-01


Part Number 2SJ106
Description Silicon P Channel Junction Type Field Effect Transistor
Maker Toshiba Semiconductor
Total Page 4 Pages
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