2SJ106 Datasheet | Toshiba

TOSHIBA Field Effect Transistor Silicon P Channel Junction Type Audio Frequency Amplifier Applications Analog Switch Applications Constant Current Applications Impedance Converter Applications Unit: mm - High breakdown voltage: VGDS = 50 V - High input impedance: IGSS = 1.0 n A (max) (VGS = 30 V) - Low RDS (ON): RDS (ON) = 270 Ω (typ.) (IDSS = - 5 m A) - Small package Absolute Maximum Ratings (Ta = 25°C) Characteristics Gate-drain voltage Gate current Drain power dissipation Junction temperature Storage temperature range Symbol VGDS IG PD Tj Tstg Rating - 10 150 125 - 55~125 Unit V m A m W °C °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). JEDEC TO-236MOD JEITA SC-59 TOSHIBA 2-3F1B Weight: 0.012 g (typ.) Electrical Characteristics (Ta = 25°C) Characteristics Gate cut-off current Gate-drain breakdown voltage Drain current Gate-source cut-off voltage Forward transfer admittance Drain-source on resistance Input capacitance Reverse transfer capacitance Symbol Test Condition IGSS VGS = 30 V, VDS = 0 V (BR) GDS VDS = 0, IG = 100 μA IDSS...