2SJ304
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2- π- MOSIV)
DC- DC Converter, Relay Drive and Motor Drive Applications
Unit: mm z 4-V gate drive z Low drain- source ON resistance : RDS (ON) = 80 mΩ (typ.) z High forward transfer admittance : |Yfs| = 8.0 S (typ.) z Low leakage current : IDSS =
- 100 μA (max) (VDS =
- 60 V) z Enhancement mode : Vth =
- 0.8 to
- 2.0 V (VDS =
- 10 V, ID =
- 1 m A)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain- source voltage
Drain- gate voltage (RGS = 20 kΩ)
Gate- source voltage
Drain current
DC (Note 1) Pulse(Note 1)
Drain power dissipation (Tc = 25°C)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS ID IDP PD Tch Tstg
- 60
- 60
±20
- 14
- 56 40 150
- 55 to 150
W °C °C
JEDEC
―
JEITA
SC-67
TOSHIBA
2-10R1B
Weight: 1.9 g...
