2SJ312 Description
2SJ312 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2−π−MOSIV) 2SJ312 DC−DC Converter, Relay Drive and Motor Drive Applications Unit: mm l 4 V gate drive l Low drain−source ON resistance : RDS (ON) = 80 mΩ (typ.) l High forward transfer admittance.
2SJ312 Key Features
- 4 V gate drive
- Low drain−source ON resistance : RDS (ON) = 80 mΩ (typ.)
- High forward transfer admittance : |Yfs| = 8.0 S (typ.)
- Low leakage current : IDSS = −100 µA (max) (VDS = −60 V)
- Enhancement−mode : Vth = −0.8~−2.0 V (VDS = −10 V, ID = −1 mA) Maximum Ratings (Ta = 25°C) Characteristics