2SJ315
FEATURES z 4- Volt gate drive z Low drain- source ON resistance : RDS (ON) = 0.25 Ω (typ.) z High forward transfer admittance : |Yfs| = 3.0 S (typ.) z Low leakage current : IDSS =
- 100 µA (max) (VDS =
- 60 V) z Enhancement mode : Vth =
- 0.8~- 2.0 V (VDS =
- 10 V, ID =
- 1 m A)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain- source voltage
Drain- gate voltage (RGS = 20 kΩ) Gate- source voltage
Drain current
DC (Note 1) Pulse(Note 1)
Drain power dissipation (Tc = 25°C)
Channel temperature
Storage temperature range
VDSS VDGR VGSS
ID IDP PD Tch Tstg
- 60
- 60 ±20
- 5
- 20 20 150
- 55~150
W °C °C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design...
