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2SJ315 - P-Channel MOSFET

2SJ315 Description

2SJ315 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2 *π *MOSIV) 2SJ315 DC *DC Converter Unit: mm .

2SJ315 Features

* z 4
* Volt gate drive z Low drain
* source ON resistance : RDS (ON) = 0.25 Ω (typ. ) z High forward transfer admittance : |Yfs| = 3.0 S (typ. ) z Low leakage current : IDSS =
* 100 µA (max) (VDS =
* 60 V) z Enhancement mode : Vth =
* 0.8~
* 2.0 V (VDS =

2SJ315 Applications

* of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
* TOSHIBA is continually wo

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P-Channel MOSFET Toshiba Semiconductor
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