2SK2661 - Silicon N Channel MOS Type Field Effect Transistor

Datasheet Details

Part number	2SK2661
Manufacturer	Toshiba Electronic Devices & Storage
File Size	690.18 KB
Description	Silicon N Channel MOS Type Field Effect Transistor
Datasheet	2SK2661 Datasheet
Additional preview pages of the 2SK2661 datasheet.

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2SK2661 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π–MOSV) 2SK2661 Chopper Regulator, DC–DC Converter and Motor Drive Applications Unit: mm z Low drain–source ON resistance : RDS (ON) = 1.35 Ω (typ.) z High forward transfer admittance : |Yfs| = 4.0 S (typ.) z Low leakage current : IDSS = 100 μA (max) (VDS = 500 V) z Enhancement mode : Vth = 2.0~4.

Published: Mar 30, 2005 |