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GT30J322 Datasheet, Toshiba Semiconductor

GT30J322 igbt equivalent, silicon n-channel igbt.

GT30J322 Avg. rating / M : 1.0 rating-121

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GT30J322 Datasheet

Application

z FRD included between emitter and collector z Enhancement mode type z High speed : tf = 0.25μs (Typ.) (IC = 50A) z.

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