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GT8G132
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT8G132
Strobe Flash Applications
Unit: mm • • • • •
Supplied in compact and thin package requires only a small mounting area 5th generation (trench gate structure) IGBT Enhancement-mode 4-V gate drive voltage: VGE = 4.0 V (min) (@IC = 150 A) Peak collector current: IC = 150 A (max)
Maximum Ratings (Ta = 25°C)
Characteristics Collector-emitter voltage Gate-emitter voltage DC Pulse DC 1 ms (Note 1) Symbol VCES VGES VGES IC ICP PC Tj Rating 400 ±6 ±8 8 150 1.1 Unit V V
Collector current Collector power dissipation Junction temperature
A W
JEDEC JEITA
― ― 2-6J1C
Storage temperature range
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GT8G132 Datasheet
