Datasheet4U Logo Datasheet4U.com

GT8G132 Silicon N-Channel IGBT

GT8G132 Description

www.DataSheet4U.com GT8G132 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT8G132 Strobe Flash Applications Unit: mm *

GT8G132 Applications

* Unit: mm
* Supplied in compact and thin package requires only a small mounting area 5th generation (trench gate structure) IGBT Enhancement-mode 4-V gate drive voltage: VGE = 4.0 V (min) (@IC = 150 A) Peak collector current: IC = 150 A (max) Maximum

📥 Download Datasheet

Preview of GT8G132 PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • GT8G101 - Silicon N-Channel MOSFET (ETC)
  • GT8G151 - Silicon N-Channel IGBT (Toshiba)
  • GT8002 - LCD MODULE (Jewel Hill Electronic)
  • GT800N10 - N-Channel Enhancement Mode Power MOSFET (GOFORD)
  • GT800N10L - N-Channel Enhancement Mode Power MOSFET (GOFORD)
  • GT811 - Toxic Gas Sensor Manual (SAFETY SYSTEMS TECHNOLOGY)
  • GT813 - 5 capacitive touch (Goodix)
  • GT818 - Smart phones 5:00 capacitive screen controller (Goodix)

📌 All Tags

Silicon N-Channel IGBT Toshiba Semiconductor
Toshiba Semiconductor GT8G132-like datasheet