GT8G136 Description
GT8G136 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT8G136 Strobe Flash Applications pact and Thin (TSSOP-8) package Enhancement-mode Peak collector current: IC = 150 A (max) (@VGE=3.0V(min),Ta=70℃(max))/ Unit: Using continuously under heavy loads (e.g.