Full PDF Text Transcription for SSM3K127TU (Reference)
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SSM3K127TU. For precise diagrams, and layout, please refer to the original PDF.
SSM3K127TU TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM3K127TU ○ Power Management Switch Applications ○ High-Speed Switching Applications • 1.8V drive •...
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Switch Applications ○ High-Speed Switching Applications • 1.8V drive • Low ON-resistance: Ron = 286 mΩ (max) (@VGS = 1.8V) : Ron = 167 mΩ (max) (@VGS = 2.5V) : Ron = 123 mΩ (max) (@VGS = 4.0V) 2.1±0.1 1.7±0.1 Unit: mm 0.3-+00..015 1 2 3 2.0±0.1 0.65±0.05 Absolute Maximum Ratings (Ta = 25°C) 0.166±0.05 0.7±0.05 Characteristic Symbol Rating Unit Drain-Source voltage VDSS 30 V Gate-Source voltage VGSS ±12 V Drain current DC ID Pulse IDP 2.0 A 4.0 Drain power dissipation PD (Note 1) 800 mW PD (Note 2) 500 Channel temperature Tch 150 °C UFM JEDEC 1. Gate 2. Souce 3.
SSM3K127TU Datasheet
