Full PDF Text Transcription for SSM3K131TU (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
SSM3K131TU. For precise diagrams, and layout, please refer to the original PDF.
SSM3K131TU TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type (U-MOSⅣ) SSM3K131TU ○ High-Speed Switching Applications • 4.5-V drive • Low ON-resistance : Ron = 41...
View more extracted text
ed Switching Applications • 4.5-V drive • Low ON-resistance : Ron = 41.5 mΩ (max) (@VGS = 4.5 V) : Ron = 27.6 mΩ (max) (@VGS = 10 V) 2.1±0.1 1.7±0.1 Unit: mm 0.3-+00..015 2.0±0.1 0.65±0.05 0.166±0.05 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-Source voltage VDSS 30 V Gate-Source voltage VGSS ±20 V Drain current DC ID (Note 1) 6.0 A Pulse IDP (Note 1) 12.0 PD (Note 2) 800 Drain power dissipation PD (Note 3) 500 mW t = 10 s 1000 0.7±0.05 1 2 3 Channel temperature Tch 150 °C 1: Gate Storage temperature range Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g.
SSM3K131TU Datasheet
