SSM3K329R mosfet equivalent, silicon n-channel mosfet.
(1) 1.8-V gate drive voltage. (2) Low drain-source on-resistance
: RDS(ON) = 289 mΩ (max) (@VGS = 1.8 V) RDS(ON) = 170 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 126 mΩ (max) (@VG.
* Power Management Switches
* High-Speed Switching
2. Features
(1) 1.8-V gate drive voltage. (2) Low drain-sourc.
Image gallery
Download