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SSM3K329R - Silicon N-Channel MOSFET

Key Features

  • (1) 1.8-V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 289 mΩ (max) (@VGS = 1.8 V) RDS(ON) = 170 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 126 mΩ (max) (@VGS = 4.0 V) 3. Packaging and Internal Circuit SOT-23F SSM3K329R 1: Gate 2: Source 3: Drain ©2021 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2010-02 2021-10-22 Rev.1.0 SSM3K329R 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25.
  • ) Characteristics Symbol Rat.

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Datasheet Details

Part number SSM3K329R
Manufacturer Toshiba
File Size 410.10 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet SSM3K329R Datasheet

Full PDF Text Transcription for SSM3K329R (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for SSM3K329R. For precise diagrams, and layout, please refer to the original PDF.

MOSFETs Silicon N-Channel MOS SSM3K329R 1. Applications • Power Management Switches • High-Speed Switching 2. Features (1) 1.8-V gate drive voltage. (2) Low drain-source ...

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tching 2. Features (1) 1.8-V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 289 mΩ (max) (@VGS = 1.8 V) RDS(ON) = 170 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 126 mΩ (max) (@VGS = 4.0 V) 3. Packaging and Internal Circuit SOT-23F SSM3K329R 1: Gate 2: Source 3: Drain ©2021 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2010-02 2021-10-22 Rev.1.0 SSM3K329R 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 �) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage VDSS 30 V VGSS ±12 V Drain current (DC) (Note 1) ID 3.5 A Drain current (pu

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