SSM6G18NU diode equivalent, silicon epitaxial schottky barrier diode.
(1) Combined a P-channel MOSFET and a Schottky barrier diode in one package.
2.1. MOSFET Features
(1) Low drain-source on-resistance : RDS(ON) = 261 mΩ (max) (VGS = -1.5 .
* Power Management Switches
2. Features
(1) Combined a P-channel MOSFET and a Schottky barrier diode in one package..
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