SSM6E03TU - Silicon P-Channel MOSFET

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Toshiba Semiconductor

Part number	SSM6E03TU
Manufacturer	Toshiba Semiconductor
File Size	384.72 KB
Description	Silicon P-Channel MOSFET
Datasheet	SSM6E03TU Datasheet
Additional preview pages of the SSM6E03TU datasheet.

low RDS (ON) and low-voltage operation 1 2 3 6 5 4 Q1 Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-Source voltage Gate-Source voltage Drain current DC Pulse Symbol VDS VGSS ID IDP (Note 1) Rating.
20 ±8 -1.8 -3.6 Unit V V A 0.7±0.05 Q2 Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-Source voltage Gate-Source voltage Drain current DC Pulse Symbol VDS VGSS ID IDP (Note 1) Rating 20 ± 10 0.1 0.2 Unit V V A 1.Nch source 2.Pch drain 3.Pch drain UF6 JEDEC JEITA.

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Published: Sep 18, 2014 |