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SSM6E03TU - Silicon P-Channel MOSFET

Features

  • low RDS (ON) and low-voltage operation 1 2 3 6 5 4 Q1 Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-Source voltage Gate-Source voltage Drain current DC Pulse Symbol VDS VGSS ID IDP (Note 1) Rating.
  • 20 ±8 -1.8 -3.6 Unit V V A 0.7±0.05 Q2 Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-Source voltage Gate-Source voltage Drain current DC Pulse Symbol VDS VGSS ID IDP (Note 1) Rating 20 ± 10 0.1 0.2 Unit V V A 1.Nch source 2.Pch drain 3.Pch drain UF6 JEDEC JEITA.

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Datasheet Details

Part number SSM6E03TU
Manufacturer Toshiba Semiconductor
File Size 384.72 KB
Description Silicon P-Channel MOSFET
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Full PDF Text Transcription

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SSM6E03TU TOSHIBA Multi-Chip Device Silicon P-Channel MOS Type + N-Channel MOS Type SSM6E03TU Power Management Switch Applications • • • • Unit: mm P-channel MOSFET and 1.8 V drive N-channel MOSFET and 1.5 V drive P-channel MOSFET and N-channel MOSFET incorporated into one package. 0.65 0.65 2.0±0.1 1.3±0.1 2.1±0.1 1.7±0.1 +0.1 0.3-0.05 Low power dissipation due to P-channel MOSFET that features low RDS (ON) and low-voltage operation 1 2 3 6 5 4 Q1 Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-Source voltage Gate-Source voltage Drain current DC Pulse Symbol VDS VGSS ID IDP (Note 1) Rating −20 ±8 -1.8 -3.6 Unit V V A 0.7±0.
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