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SSM6G18NU - Silicon Epitaxial Schottky Barrier Diode

Key Features

  • (1) Combined a P-channel MOSFET and a Schottky barrier diode in one package. 2.1. MOSFET Features (1) Low drain-source on-resistance : RDS(ON) = 261 mΩ (max) (VGS = -1.5 V) RDS(ON) = 185 mΩ (max) (VGS = -1.8 V) RDS(ON) = 143 mΩ (max) (VGS = -2.5 V) RDS(ON) = 112 mΩ (max) (VGS = -4.5 V) 2.2. Diode Features (1) Low forward voltage: VF = 0.48 V (typ. ) (@IF = 1000 mA) 3. Packaging and Internal Circuit UDFN6 1.Anode 2.N. C. 3.Drain 4.Source 5.Gate 6.Cathode ©2021-2022 1 Toshiba Electronic Devices.

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Datasheet Details

Part number SSM6G18NU
Manufacturer Toshiba
File Size 457.28 KB
Description Silicon Epitaxial Schottky Barrier Diode
Datasheet download datasheet SSM6G18NU Datasheet

Full PDF Text Transcription for SSM6G18NU (Reference)

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Composite Devices Silicon P-Channel MOS / Epitaxial Schottky Barrier SSM6G18NU SSM6G18NU 1. Applications • Power Management Switches 2. Features (1) Combined a P-channel ...

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ions • Power Management Switches 2. Features (1) Combined a P-channel MOSFET and a Schottky barrier diode in one package. 2.1. MOSFET Features (1) Low drain-source on-resistance : RDS(ON) = 261 mΩ (max) (VGS = -1.5 V) RDS(ON) = 185 mΩ (max) (VGS = -1.8 V) RDS(ON) = 143 mΩ (max) (VGS = -2.5 V) RDS(ON) = 112 mΩ (max) (VGS = -4.5 V) 2.2. Diode Features (1) Low forward voltage: VF = 0.48 V (typ.) (@IF = 1000 mA) 3. Packaging and Internal Circuit UDFN6 1.Anode 2.N.C. 3.Drain 4.Source 5.Gate 6.Cathode ©2021-2022 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2010-11 2022-12-01 Rev.1.0 SSM6G18NU

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