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SSM6J07FU
TOSHIBA Transistor Silicon P Channel MOS Type
SSM6J07FU
Power Management Switch High Speed Switching Applications
• • Small package Low on resistance Unit: mm
: Ron = 450 mΩ (max) (VGS = −10 V) www.DataSheet4U.com : Ron = 800 mΩ (max) (VGS = −4 V)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Gate-source voltage Drain current Drain power dissipation Channel temperature Storage temperature range DC Pulse Symbol VDS VGSS ID IDP PD (Note 1) Tch Tstg Rating −30 ±20 −0.8 −1.6 300 150 −55~150 Unit V V A mW °C °C
JEDEC
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Note:
JEITA ― Using continuously under heavy loads (e.g. the application of TOSHIBA 2-2J1D high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the Weight: 6.8 mg (typ.
SSM6J07FU Datasheet
