| Part number | SSM6J206FE |
|---|---|
| Datasheet | SSM6J206FE_ToshibaSemiconductor.pdf |
| File Size | 236.74 KB |
| Manufacturer | Toshiba |
| Description | High-Speed Switching Applications |
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SSM6J206FE TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM6J206FE ○ Power Management Switch Applications ○ High-Speed Switching Applications 1.8 V drive Low ON-resistance: Ron = 320 mΩ (max) (@VGS = -1.8 V) Ron = 186 mΩ (max) (@VGS = -2.5 V) Ron = 130 mΩ (max) (@VGS = -4.0 V) .. Using continuously under heavy loads (e.g.
| Part Number | Description |
|---|---|
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| SSM6J212FE | Silicon P-Channel MOSFET |
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| SSM6J215FE | Silicon P-Channel MOSFET |
| SSM6J216FE | Silicon P-Channel MOSFET |
| SSM6J21TU | High Current Switching Applications |
| SSM6J23FE | Silicon P-Channel MOSFET |
| SSM6J25FE | Silicon P-Channel MOSFET |
