Click to expand full text
SSM6J206FE
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type
SSM6J206FE
○ Power Management Switch Applications ○ High-Speed Switching Applications
• • 1.8 V drive Low ON-resistance: Ron = 320 mΩ (max) (@VGS = -1.8 V) Ron = 186 mΩ (max) (@VGS = -2.5 V) Ron = 130 mΩ (max) (@VGS = -4.0 V)
www.DataSheet4U.com
Unit: mm
Absolute Maximum Ratings (Ta = 25˚C)
Characteristic Drain–source voltage Gate–source voltage Drain current Drain power dissipation Channel temperature Storage temperature DC Pulse Symbol VDS VGSS ID IDP PD (Note 1) Tch Tstg Rating -20 ±8 -2 -4 500 150 −55 to 150 Unit V V A mW °C °C ES6 1, 2, 5, 6 : Drain 3 4 : Gate : Source
Note:
Using continuously under heavy loads (e.g.
SSM6J206FE Datasheet
