Datasheet Summary
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ)
○ Power Management Switch Applications
- 1.8 V drive
- Low ON-resistance: RDS(ON) = 149.6 mΩ (max) (@VGS = -1.8 V)
RDS(ON) = 77.6 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 57.0 mΩ (max) (@VGS = -4.5 V) RDS(ON) = 50.0 mΩ (max) (@VGS = -10 V)
Unit:...