SSM6J214FE Description
SSM6J214FE TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ) SSM6J214FE ○ Power Management Switch Applications 1.8 V drive Low ON-resistance: RDS(ON) = 149.6 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 77.6 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 57.0 mΩ (max) (@VGS = -4.5 V) RDS(ON) = 50.0 mΩ (max) (@VGS = -10 V) Unit: Using continuously under heavy loads (e.g.