| Part number | SSM6J214FE |
|---|---|
| Datasheet | SSM6J214FE-ToshibaSemiconductor.pdf |
| File Size | 208.61 KB |
| Manufacturer | Toshiba |
| Description | Silicon P-Channel MOSFET |
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SSM6J214FE TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ) SSM6J214FE ○ Power Management Switch Applications 1.8 V drive Low ON-resistance: RDS(ON) = 149.6 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 77.6 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 57.0 mΩ (max) (@VGS = -4.5 V) RDS(ON) = 50.0 mΩ (max) (@VGS = -10 V) Unit: Using continuously under heavy loads (e.g.
| Part Number | Description |
|---|---|
| SSM6J212FE | Silicon P-Channel MOSFET |
| SSM6J213FE | Silicon P-Channel MOSFET |
| SSM6J215FE | Silicon P-Channel MOSFET |
| SSM6J216FE | Silicon P-Channel MOSFET |
| SSM6J21TU | High Current Switching Applications |
| SSM6J205FE | High-Speed Switching Applications |
| SSM6J206FE | High-Speed Switching Applications |
| SSM6J207FE | Silicon P-Channel MOSFET |
| SSM6J23FE | Silicon P-Channel MOSFET |
| SSM6J25FE | Silicon P-Channel MOSFET |
