Full PDF Text Transcription for SSM6J213FE (Reference)
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SSM6J213FE TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ) SSM6J213FE ○ Power Management Switch Applications • 1.5-V drive • Low ON-resistance: RDS(ON...
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nagement Switch Applications • 1.5-V drive • Low ON-resistance: RDS(ON) = 250 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 178 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 133 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 103 mΩ (max) (@VGS = -4.5 V) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage VDSS -20 V Gate-source voltage VGSS ±8 V Drain current DC ID (Note 1) -2.6 A Pulse IDP (Note 1) -5.2 Power dissipation Channel temperature Storage temperature range PD (Note 2) 500 mW t = 10s 700 Tch 150 °C Tstg −55 to 150 °C ES6 1,2,5,6 ： Drain 3 ： Gate 4 ： Source Note: Using continuously under heavy loads
SSM6J213FE Datasheet
