Click to expand full text
SSM6J213FE
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ)
SSM6J213FE
○ Power Management Switch Applications
• 1.5-V drive • Low ON-resistance: RDS(ON) = 250 mΩ (max) (@VGS = -1.5 V)
RDS(ON) = 178 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 133 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 103 mΩ (max) (@VGS = -4.5 V)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
VDSS
-20
V
Gate-source voltage
VGSS
±8
V
Drain current
DC
ID (Note 1)
-2.6
A
Pulse
IDP (Note 1)
-5.2
Power dissipation
Channel temperature Storage temperature range
PD (Note 2)
500
mW
t = 10s
700
Tch
150
°C
Tstg
−55 to 150
°C
ES6
1,2,5,6 ： Drain
3
： Gate
4
： Source
Note: Using continuously under heavy loads (e.g.
SSM6J213FE Datasheet
