Datasheet Summary
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ)
○ Power Management Switch Applications
- 1.5-V drive
- Low ON-resistance: RDS(ON) = 250 mΩ (max) (@VGS = -1.5 V)
RDS(ON) = 178 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 133 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 103 mΩ (max) (@VGS = -4.5 V)
Unit:...