| Part number | SSM6J212FE |
|---|---|
| Datasheet | SSM6J212FE_ToshibaSemiconductor.pdf |
| File Size | 207.13 KB |
| Manufacturer | Toshiba |
| Description | Silicon P-Channel MOSFET |
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SSM6J212FE TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ) SSM6J212FE ○ Power Management Switch Applications 1.5-V drive Low ON-resistance: RDS(ON) = 94.0 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 65.4 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 49.0 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 40.7 mΩ (max) (@VGS = -4.5 V) Unit: Using continuously under heavy loads (e.g.
| Part Number | Description |
|---|---|
| SSM6J213FE | Silicon P-Channel MOSFET |
| SSM6J214FE | Silicon P-Channel MOSFET |
| SSM6J215FE | Silicon P-Channel MOSFET |
| SSM6J216FE | Silicon P-Channel MOSFET |
| SSM6J21TU | High Current Switching Applications |
| SSM6J205FE | High-Speed Switching Applications |
| SSM6J206FE | High-Speed Switching Applications |
| SSM6J207FE | Silicon P-Channel MOSFET |
| SSM6J23FE | Silicon P-Channel MOSFET |
| SSM6J25FE | Silicon P-Channel MOSFET |
