Full PDF Text Transcription for SSM6J212FE (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
SSM6J212FE. For precise diagrams, and layout, please refer to the original PDF.
SSM6J212FE TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ) SSM6J212FE ○ Power Management Switch Applications • 1.5-V drive • Low ON-resistance: RDS(ON...
View more extracted text
nagement Switch Applications • 1.5-V drive • Low ON-resistance: RDS(ON) = 94.0 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 65.4 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 49.0 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 40.7 mΩ (max) (@VGS = -4.5 V) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain-source voltage Gate-source voltage Drain current DC Pulse Power dissipation Channel temperature Storage temperature range Symbol Rating Unit VDSS -20 V VGSS ±8 V ID (Note 1) -4.0 A IDP (Note 1) -8.0 PD (Note 2) 500 mW t = 10s 700 Tch 150 °C Tstg −55 to 150 °C ES6 1,2,5,6 ： Drain 3 ： Gate 4 ： Source JEDEC ― Note: Using continuously under
SSM6J212FE Datasheet
