• Part: SSM6J216FE
  • Description: Silicon P-Channel MOSFET
  • Manufacturer: Toshiba
  • Size: 215.76 KB
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Datasheet Summary

MOSFETs Silicon P-Channel MOS (U-MOS) 1. Applications - Power Management Switches 2. Features (1) 1.5-V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 88.1 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 56.0 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 39.3 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 32.0 mΩ (max) (@VGS = -4.5 V) 3. Packaging and Pin Configuration ES6 1.2.5.6 : Drain 3 : Gate 4 : Source Start of mercial production 2012-11 2014-03-12 Rev.3.0 4....