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SSM6J216FE - Silicon P-Channel MOSFET

Features

  • (1) 1.5-V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 88.1 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 56.0 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 39.3 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 32.0 mΩ (max) (@VGS = -4.5 V) 3. Packaging and Pin Configuration ES6 SSM6J216FE 1.2.5.6 : Drain 3 : Gate 4 : Source Start of commercial production 2012-11 1 2014-03-12 Rev.3.0 SSM6J216FE 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25) Characteristics Symbol Rating U.

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Datasheet Details

Part number SSM6J216FE
Manufacturer Toshiba Semiconductor
File Size 215.76 KB
Description Silicon P-Channel MOSFET
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MOSFETs Silicon P-Channel MOS (U-MOS) SSM6J216FE 1. Applications • Power Management Switches 2. Features (1) 1.5-V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 88.1 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 56.0 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 39.3 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 32.0 mΩ (max) (@VGS = -4.5 V) 3. Packaging and Pin Configuration ES6 SSM6J216FE 1.2.5.6 : Drain 3 : Gate 4 : Source Start of commercial production 2012-11 1 2014-03-12 Rev.3.0 SSM6J216FE 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25) Characteristics Symbol Rating Unit Drain-source voltage VDSS -12 V Gate-source voltage VGSS ±8 Drain current (DC) (Note 1) ID -4.
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