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SSM6J21TU
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅢ)
SSM6J21TU
High Current Switching Applications
• • Suitable for high-density mounting due to compact package Low on resistance: Ron = 88 mΩ (max) (@VGS = -2.5 V) Unit: mm
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Absolute Maximum Ratings (Ta = 25°C)
Characteristics Drain-Source voltage Gate-Source voltage Drain current Drain power dissipation Channel temperature Storage temperature range DC Pulse Symbol VDS VGSS ID IDP PD (Note 1) Tch Tstg Rating -12 ±12 -3 -6 500 150 −55~150 Unit V V A mW °C °C
1,2,5,6 : Drain 3 : Gate 4 : Source
JEDEC
-
Note:
Using continuously under heavy loads (e.g. the application of JEITA high temperature/current/voltage and the significant change in TOSHIBA 2-2T1D temperature, etc.
SSM6J21TU Datasheet
