Full PDF Text Transcription for SSM6J21TU (Reference)
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SSM6J21TU. For precise diagrams, and layout, please refer to the original PDF.
SSM6J21TU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅢ) SSM6J21TU High Current Switching Applications • • Suitable for high-density mounting due to ...
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Switching Applications • • Suitable for high-density mounting due to compact package Low on resistance: Ron = 88 mΩ (max) (@VGS = -2.5 V) Unit: mm www.DataSheet4U.com Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-Source voltage Gate-Source voltage Drain current Drain power dissipation Channel temperature Storage temperature range DC Pulse Symbol VDS VGSS ID IDP PD (Note 1) Tch Tstg Rating -12 ±12 -3 -6 500 150 −55~150 Unit V V A mW °C °C 1,2,5,6 : Drain 3 : Gate 4 : Source JEDEC - Note: Using continuously under heavy loads (e.g. the application of JEITA high temperature/current/voltage and the significant cha
SSM6J21TU Datasheet
