Click to expand full text
SSM6J207FE
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type
SSM6J207FE
○ High-Speed Switching Applications
• 4 V drive • Low ON-resistance:
Ron = 491 mΩ (max) (@VGS = −4 V) Ron = 251 mΩ (max) (@VGS = −10 V)
Unit: mm
Absolute Maximum Ratings (Ta = 25˚C)
Characteristic
Symbol
Rating
Unit
Drain–source voltage
VDS
-30
V
Gate–source voltage
VGSS
± 20
V
Drain current
DC
ID
Pulse
IDP
-1.4 A
-2.8
Drain power dissipation
PD (Note 1)
500
mW
Channel temperature Storage temperature
Tch
150
°C
Tstg
−55 to 150
°C
Note: Note 1:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.
SSM6J207FE Datasheet
