Full PDF Text Transcription for SSM6J207FE (Reference)
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SSM6J207FE TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM6J207FE ○ High-Speed Switching Applications • 4 V drive • Low ON-resistance: Ron = 491 mΩ (max) (...
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ing Applications • 4 V drive • Low ON-resistance: Ron = 491 mΩ (max) (@VGS = −4 V) Ron = 251 mΩ (max) (@VGS = −10 V) Unit: mm Absolute Maximum Ratings (Ta = 25˚C) Characteristic Symbol Rating Unit Drain–source voltage VDS -30 V Gate–source voltage VGSS ± 20 V Drain current DC ID Pulse IDP -1.4 A -2.8 Drain power dissipation PD (Note 1) 500 mW Channel temperature Storage temperature Tch 150 °C Tstg −55 to 150 °C Note: Note 1: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.
SSM6J207FE Datasheet
