SSM6J207FE Description
SSM6J207FE TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM6J207FE ○ High-Speed Switching Applications 4 V drive Low ON-resistance: Ron = 491 mΩ (max) (@VGS = −4 V) Ron = 251 mΩ (max) (@VGS = −10 V) Unit: mm Ratings (Ta = 25˚C) Characteristic Symbol Rating Unit Drain source voltage VDS -30 V Gate source voltage VGSS ± 20 V Drain current DC ID Pulse IDP -1.4 A -2.8 Drain power dissipation PD (Note 1)...