| Part number | SSM6J207FE |
|---|---|
| Datasheet | SSM6J207FE_ToshibaSemiconductor.pdf |
| File Size | 204.87 KB |
| Manufacturer | Toshiba |
| Description | Silicon P-Channel MOSFET |
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SSM6J207FE TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM6J207FE ○ High-Speed Switching Applications 4 V drive Low ON-resistance: Ron = 491 mΩ (max) (@VGS = −4 V) Ron = 251 mΩ (max) (@VGS = −10 V) Unit: mm Ratings (Ta = 25˚C) Characteristic Symbol Rating Unit Drain source voltage VDS -30 V Gate source voltage VGSS ± 20 V Drain current DC ID Pulse IDP -1.4 A -2.8 Drain power dissipation PD (Note 1)...
| Part Number | Description |
|---|---|
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| SSM6J206FE | High-Speed Switching Applications |
| SSM6J212FE | Silicon P-Channel MOSFET |
| SSM6J213FE | Silicon P-Channel MOSFET |
| SSM6J214FE | Silicon P-Channel MOSFET |
| SSM6J215FE | Silicon P-Channel MOSFET |
| SSM6J216FE | Silicon P-Channel MOSFET |
| SSM6J21TU | High Current Switching Applications |
| SSM6J23FE | Silicon P-Channel MOSFET |
| SSM6J25FE | Silicon P-Channel MOSFET |
