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SSM6J205FE
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type
SSM6J205FE
High-Speed Switching Applications Power Management Switch Applications
• • • 1.8V drive P-ch 2-in-1 Low ON-resistance: Unit: mm
Ron = 460 mΩ (max) (@VGS = −1.8 V) Ron = 306 mΩ (max) (@VGS = −2.5 V) Ron = 234 mΩ (max) (@VGS = −4.0 V)
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Absolute Maximum Ratings (Ta = 25°C)
Characteristic Drain-source voltage Gate-source voltage Drain current Drain power dissipation Channel temperature Storage temperature range DC Pulse Symbol VDS VGSS ID IDP PD (Note 1) Tch Tstg Rating −20 ±8 −0.8 −1.6 500 150 −55 to 150 Unit V V A mW °C °C ES6 1, 2, 5, 6 : Drain 3 4 : Gate : Source
Note:
Using continuously under heavy loads (e.g.
SSM6J205FE Datasheet
