Full PDF Text Transcription for SSM6J205FE (Reference)
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SSM6J205FE TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM6J205FE High-Speed Switching Applications Power Management Switch Applications • • • 1.8V drive P...
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g Applications Power Management Switch Applications • • • 1.8V drive P-ch 2-in-1 Low ON-resistance: Unit: mm Ron = 460 mΩ (max) (@VGS = −1.8 V) Ron = 306 mΩ (max) (@VGS = −2.5 V) Ron = 234 mΩ (max) (@VGS = −4.0 V) www.DataSheet4U.com Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain-source voltage Gate-source voltage Drain current Drain power dissipation Channel temperature Storage temperature range DC Pulse Symbol VDS VGSS ID IDP PD (Note 1) Tch Tstg Rating −20 ±8 −0.8 −1.6 500 150 −55 to 150 Unit V V A mW °C °C ES6 1, 2, 5, 6 : Drain 3 4 : Gate : Source Note: Using continuously under heavy loads (e.g.
SSM6J205FE Datasheet
