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SSM6J06FU
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
SSM6J06FU
Power Management Switch High Speed Switching Applications
• • • Small package Low on resistance : Ron = 0.5 Ω max (VGS = −4 V) : Ron = 0.7 Ω max (VGS = −2.5 V) Low gate threshold voltage
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Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Gate-source voltage Drain current DC Pulse Symbol VDS VGSS ID IDP PD (Note 1) Tch Tstg Rating −20 ±12 −650 −1300 300 150 −55~150 Unit V V mA
Drain power dissipation (Ta = 25°C) Channel temperature Storage temperature range
mW °C °C
JEDEC
―
Note:
JEITA ― Using continuously under heavy loads (e.g. the application of TOSHIBA 2-2J1D high temperature/current/voltage and the significant change in temperature, etc.
SSM6J06FU Datasheet
