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SSM6E01TU - Silicon P-Channel MOSFET

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Toshiba Semiconductor

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SSM6E01TU Silicon P-Channel MOSFET by Toshiba Semiconductor - Datasheet Preview — Datasheet preview – SSM6E01TU

Datasheet Details

Part number	SSM6E01TU
Manufacturer	Toshiba Semiconductor
File Size	174.63 KB
Description	Silicon P-Channel MOSFET
Datasheet	SSM6E01TU Datasheet
Additional preview pages of the SSM6E01TU datasheet.

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Features

low RDS (ON) and low-voltage operation Unit: mm Q1 Maximum Ratings (Ta = 25°C) Characteristics Drain-Source voltage Gate-Source voltage Drain current DC Pulse Symbol VDS VGSS ID IDP (Note 2) Rating -12 ±12 -1.0 -2.0 Unit V V A Q2 Maximum Ratings (Ta = 25°C) Characteristics Drain-Source voltage Gate-Source voltage Drain current DC Pulse Symbol VDS VGSS ID IDP (Note 2) Rating 20 10 0.05 0.2 Unit V V A JEDEC JEITA.

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Published: Sep 18, 2014 |