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SSM6J216FE Datasheet, Toshiba Semiconductor

SSM6J216FE mosfet equivalent, silicon p-channel mosfet.

SSM6J216FE Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 215.76KB)

SSM6J216FE Datasheet

Features and benefits

(1) 1.5-V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 88.1 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 56.0 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 39.3 mΩ (max).

Application


* Power Management Switches 2. Features (1) 1.5-V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) =.

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TAGS

SSM6J216FE
Silicon
P-Channel
MOSFET
Toshiba Semiconductor

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