SSM6J216FE mosfet equivalent, silicon p-channel mosfet.
(1) 1.5-V gate drive voltage. (2) Low drain-source on-resistance
: RDS(ON) = 88.1 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 56.0 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 39.3 mΩ (max).
* Power Management Switches
2. Features
(1) 1.5-V gate drive voltage. (2) Low drain-source on-resistance
: RDS(ON) =.
Image gallery
TAGS