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SSM6J409TU
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS V)
SSM6J409TU
○ Power Management Switch Applications ○ High-Speed Switching Applications
• 1.5V drive • Low ON-resistance:
Ron = 72.3mΩ (max) (@VGS = -1.5 V) Ron = 46.2mΩ (max) (@VGS = -1.8 V) Ron = 30.2mΩ (max) (@VGS = -2.5 V) Ron = 22.1mΩ (max) (@VGS = -4.5 V)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-Source voltage
VDSS
−20
V
Gate-Source voltage
VGSS
±8
V
Drain current
DC
ID (Note 1)
−9.5
A
Pulse
IDP (Note 1)
−19.0
Drain power dissipation
PD (Note 2)
1
W
t=10s
2
1,2,5,6 : Drain
3
: Gate
4
: Source
Channel temperature Storage temperature range
Tch
150
°C
Tstg
−55 to 150
°C
Note: Using continuously under heavy loads (e.g.
SSM6J409TU Datasheet
