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SSM6N16FU
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM6N16FU
High Speed Switching Applications Analog Switch Applications
Unit: mm
• Suitable for high-density mounting due to compact package • Low on resistance: Ron = 3.0 Ω (max) (@VGS = 4 V)
: Ron = 4.0 Ω (max) (@VGS = 2.5 V) : Ron = 15 Ω (max) (@VGS = 1.5 V)
Absolute Maximum Ratings (Ta = 25°C)
(Q1, Q2 Common)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
VDS
20
V
Gate-Source voltage
VGSS
±10
V
Drain current
DC Pulse
ID
100
mA
IDP
200
Drain power dissipation (Ta = 25°C)
PD(Note 1)
200
mW
JEDEC
―
Channel temperature Storage temperature range
Tch
150
°C
Tstg
−55~150
°C
JEITA TOSHIBA
― 2-2J1C
Note:
Using continuously under heavy loads (e.g.
SSM6N16FU Datasheet
