SSM6N16FE Description
SSM6N16FE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N16FE High Speed Switching Applications Analog Switching Applications Suitable for high-density mounting due to pact package Low on resistance: Ron = 3.0 Ω (max) (@VGS = 4 V) : Ron = 4.0 Ω (max) (@VGS = 2.5 V).