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SSM6N16FE
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM6N16FE
High Speed Switching Applications Analog Switching Applications
Suitable for high-density mounting due to compact package Low on resistance: Ron = 3.0 Ω (max) (@VGS = 4 V)
: Ron = 4.0 Ω (max) (@VGS = 2.5 V) : Ron = 15 Ω (max) (@VGS = 1.5 V)
Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
Gate-Source voltage
Drain current
DC Pulse
Drain power dissipation (Ta = 25°C) (Note 1)
Channel temperature
Storage temperature range
VDS VGSS
ID IDP
PD
Tch Tstg
20
V
±10
V
100 mA
200
150
mW
150
°C
-55 to 150
°C
Note: Note 1:
Using continuously under heavy loads (e.g.
SSM6N16FE Datasheet
