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SSM6N15AFU
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III)
SSM6N15AFU
Load Switching Applications
• • • 2.5 V drive N-ch 2-in-1 Low ON-resistance: RDS(ON) = 3.6 Ω (max) (@VGS = 4.0 V) RDS(ON) = 6.0 Ω (max) (@VGS = 2.5 V) Unit: mm
(Q1, Q2 Common)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Drain-Source voltage Gate-Source voltage Drain current Power dissipation Channel temperature Storage temperature range DC Pulse Symbol VDSS VGSS ID IDP PD (Note 1) Tch Tstg Rating 30 ±20 100 400 300 150 −55 to 150 Unit V V mA mW °C °C
US6
1.Source1 2.Gate1 3.Drain2
4.Source2 5.Gate2 6.Drain1
JEDEC
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JEITA SC-88 Using continuously under heavy loads (e.g.
SSM6N15AFU Datasheet
