The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
SSM6N15AFU
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III)
SSM6N15AFU
Load Switching Applications
• • • 2.5 V drive N-ch 2-in-1 Low ON-resistance: RDS(ON) = 3.6 Ω (max) (@VGS = 4.0 V) RDS(ON) = 6.0 Ω (max) (@VGS = 2.5 V) Unit: mm
(Q1, Q2 Common)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Drain-Source voltage Gate-Source voltage Drain current Power dissipation Channel temperature Storage temperature range DC Pulse Symbol VDSS VGSS ID IDP PD (Note 1) Tch Tstg Rating 30 ±20 100 400 300 150 −55 to 150 Unit V V mA mW °C °C
US6
1.Source1 2.Gate1 3.Drain2
4.Source2 5.Gate2 6.Drain1
JEDEC
―
JEITA SC-88 Using continuously under heavy loads (e.g.
SSM6N15AFU Datasheet
