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SSM6N15FU
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM6N15FU
High Speed Switching Applications Analog Switching Applications
Unit: mm
• Small package
• Low ON resistance : Ron = 4.0 Ω (max) (@VGS = 4 V) : Ron = 7.0 Ω (max) (@VGS = 2.5 V)
Absolute Maximum Ratings (Ta = 25°C)
(Q1, Q2 Common)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
VDS
30
V
Gate-Source voltage
VGSS
±20
V
Drain current
DC Pulse
ID
100
mA
IDP
200
Drain power dissipation (Ta = 25°C)
PD (Note 1)
200
mW
Channel temperature
Tch
150
°C
JEDEC
―
Storage temperature range
Tstg
−55 to 150
°C
JEITA
―
Note:
Using continuously under heavy loads (e.g. the application of
TOSHIBA
2-2J1C
high temperature/current/voltage and the significant change in temperature, etc.
SSM6N15FU Datasheet
